Title :
Off-phase crosstalk behaviour and design considerations for high-speed memory buses
Author :
Chen, Amy J. ; Wang, Hao
Author_Institution :
Intel Corp., Santa Clara, CA, USA
Abstract :
The interconnect margins shrink rapidly at higher speed due to reduced bit width and increased noise level. Crosstalk impact remains the biggest concern for the single-ended memory busses such as DDR3 and GDDR5 interconnect. The phase relationship of the xtalk coupling plays an important role on interconnect performance. This paper outlines several types of off-phase crosstalk and their impact to system margin. It also provides the methodology to analyse their effects and design considerations to mitigate their impact.
Keywords :
DRAM chips; crosstalk; field buses; integrated circuit design; integrated circuit interconnections; integrated circuit noise; DDR3; GDDR5 interconnect; high-speed memory buses; noise level; off-phase crosstalk; single-ended memory busses; Crosstalk; Phase noise; Receivers; Routing; Signal analysis; Sockets; Timing;
Conference_Titel :
Electromagnetic Compatibility (EMC), 2010 IEEE International Symposium on
Conference_Location :
Fort Lauderdale, FL
Print_ISBN :
978-1-4244-6305-3
DOI :
10.1109/ISEMC.2010.5711319