Magnetoresistance of Magnetic Tunneling Junctions with Step-Like Potential Barriers

Author

Beletskii, N.N. ; Borysenko, S.A. ; Yakovenko, V.M.

Author_Institution

Usikov Inst. of Radiophys. & Electron., Ukraine Nat. Acad. of Sci., Kharkov

fYear

0

fDate

0-0 0

Firstpage

210

Lastpage

212

Abstract

The influence of the bias voltage on the magnetoresistance of a magnetic tunneling junction with a step-like potential barrier has been studied theoretically in the frame of a two-band model of free electrons in ferromagnetic electrodes. It is shown that the dependence of the magnetoresistance of the magnetic tunneling junction on the bias voltage can vary according to the type and the thickness of the isolators forming a step-like tunneling potential barrier. It has been found out that the magnetoresistance of the magnetic tunneling junction can change its sign and oscillate with increasing bias voltage

Keywords

ferromagnetic materials; magnetoelectronics; magnetoresistive devices; tunnelling magnetoresistance; bias voltage; ferromagnetic electrodes; free electrons; magnetic tunneling junction; magnetoresistance; step-like potential barrier; two-band model; Dielectrics; Electrodes; Electronic mail; Electrons; Iron; Isolators; Magnetic tunneling; Magnetization; Tunneling magnetoresistance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Mathematical Methods in Electromagnetic Theory, 2006 International Conference on

Conference_Location

Kharkiv

Print_ISBN

1-4244-0490-8

Type

conf

DOI

10.1109/MMET.2006.1689746

Filename

1689746