Title :
Magnetoresistance of Magnetic Tunneling Junctions with Step-Like Potential Barriers
Author :
Beletskii, N.N. ; Borysenko, S.A. ; Yakovenko, V.M.
Author_Institution :
Usikov Inst. of Radiophys. & Electron., Ukraine Nat. Acad. of Sci., Kharkov
Abstract :
The influence of the bias voltage on the magnetoresistance of a magnetic tunneling junction with a step-like potential barrier has been studied theoretically in the frame of a two-band model of free electrons in ferromagnetic electrodes. It is shown that the dependence of the magnetoresistance of the magnetic tunneling junction on the bias voltage can vary according to the type and the thickness of the isolators forming a step-like tunneling potential barrier. It has been found out that the magnetoresistance of the magnetic tunneling junction can change its sign and oscillate with increasing bias voltage
Keywords :
ferromagnetic materials; magnetoelectronics; magnetoresistive devices; tunnelling magnetoresistance; bias voltage; ferromagnetic electrodes; free electrons; magnetic tunneling junction; magnetoresistance; step-like potential barrier; two-band model; Dielectrics; Electrodes; Electronic mail; Electrons; Iron; Isolators; Magnetic tunneling; Magnetization; Tunneling magnetoresistance; Voltage;
Conference_Titel :
Mathematical Methods in Electromagnetic Theory, 2006 International Conference on
Conference_Location :
Kharkiv
Print_ISBN :
1-4244-0490-8
DOI :
10.1109/MMET.2006.1689746
