Title :
A 5mW limiting amplifier with 52dB gain for Gbps wireless communication
Author :
Ying, Yutong ; Huang, Lu ; Cai, Li ; Lin, Fujiang
Author_Institution :
Dept. o f Electron. Sci. & Technol., USTC, Hefei, China
Abstract :
This paper presents a low power and high gain limiting amplifier for Gbps wireless communication system in 0.18μm CMOS technology. It incorporates negative active inductor, negative resistance and negative capacitance to boost gain and bandwidth. Drawing 2.8mA from 1.8V supply, the limiting amplifier achieves 1.25Gbps data rate and 52dB differential gain. The chip is fully integrated, which occupies 0.094mm2 including on-chip DC offset correction circuit.
Keywords :
CMOS analogue integrated circuits; inductors; limiters; low noise amplifiers; low-power electronics; radiocommunication; CMOS technology; bit rate 1.25 Gbit/s; current 2.8 mA; gain 52 dB; high gain limiting amplifier; low power amplifier; negative active inductor; negative capacitance; negative resistance; on-chip DC offset correction circuit; power 5 mW; size 0.18 mum; voltage 1.8 V; wireless communication system; Active inductors; Bandwidth; CMOS integrated circuits; Capacitors; Limiting; Resistance; Wireless communication; Limiting amplifier; active inductor; negative capacitance; negative resistance; wireless communication;
Conference_Titel :
Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4673-2184-6
DOI :
10.1109/ICMMT.2012.6229899
