Title :
Broadband high efficiency GaN power amplifier
Author :
Qiu, Yijie ; Xu, Yuehang ; Guo, Yunchuan ; Xu, Ruimin
Author_Institution :
Fundamental Sci. on EHF Lab., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
This paper reports on the design methodology and realization of a hybrid feedback power amplifier using discrete GaN HEMT die with chip & wire technology. The power amplifier was measured to have over 12.8 dB gain with ±0.85dB flatness and higher than 30.7 dBm output power over 100 MHz to 1GHz. Power added efficiency (PAE) of 61.3% was acquired at mid-band frequency and more than 54.5% from 100MHz to 1GHz.
Keywords :
III-V semiconductors; UHF field effect transistors; UHF power amplifiers; feedback amplifiers; gallium compounds; power HEMT; wide band gap semiconductors; wideband amplifiers; GaN; broadband high efficiency power amplifier; chip-wire technology; discrete HEMT die; efficiency 61.3 percent; frequency 100 MHz to 1 GHz; hybrid feedback power amplifier; power added efficiency; Gain measurement; Gallium nitride; HEMTs; Power amplifiers; Power generation; Power measurement;
Conference_Titel :
Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4673-2184-6
DOI :
10.1109/ICMMT.2012.6229901
