High-gain silicon based on-chip dielectric resonator antenna at 60GHz

A high-gain silicon based on-chip dielectric resonator antenna operating at 60GHz that can be fabricated with standard CMOS technology is proposed. Both the dominant mode and one high-order mode are excited in the rectangular DRA realizing broadband characteristic. The simulated impedance bandwidth is about 17.3% (54.9-65.3GHz), covering the 7GHz band license-free around 60GHz. The proposed antenna also achieved a gain of over 0dBi from 56.8 to 65.3GHz, meeting fundamental requirement in the entire 60GHz frequency band. The peak gain at 60GHz and two resonant nulls are 3.7, 3.3 and 1.6dBi, respectively. Since only the top metal layer is utilized in the structure, the proposed antenna is easy to design and fabricate.