DocumentCode
2488947
Title
Silicon based reconfigurable antennas
Author
Fathy, A. ; Rosen, A. ; McGinty, F. ; Taylor, G. ; Perlow, S. ; ElSherbiny, M.
Author_Institution
Sarnoff Corp., Princeton, NJ, USA
Volume
1
fYear
2000
fDate
16-21 July 2000
Abstract
Summary form only given. Selects solid-state plasmas generated by PIN junctions to effectively implement various reconfigurable antennas. Other alternative technologies include MEMs switches to reconfigure antennas. PIN junctions can also be utilized as switches, and can replace MEMs to reconfigure antennas where speed of response is an issue. We have utilized these PIN junctions to dynamically define plasma regions with sufficient conductivity. Injecting high dc currents into these junctions in high resistivity silicon creates plasma regions (domains) with relatively high conductivity. The locations and shapes of these defined islands can be precisely controlled over the whole processed silicon wafer, as high resolution is a routine matter of today´s silicon technology. The defined metallic-like patterns can include the radiating elements and the feed structures as well. The dipole antenna described is segmented into three different sections to allow wide frequency coverage from 1 to 20 GHz frequency range.
Keywords
antenna feeds; antenna radiation patterns; dipole antennas; elemental semiconductors; p-i-n diodes; semiconductor plasma; silicon; 1 to 20 GHz; MEMs switches; PIN junctions; Si; dipole antenna; feed structures; metallic-like patterns; plasma regions; radiating elements; reconfigurable antennas; solid-state plasmas; Conductivity; Dipole antennas; Frequency; Microswitches; Plasmas; Shape control; Solid state circuits; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Antennas and Propagation Society International Symposium, 2000. IEEE
Conference_Location
Salt Lake City, UT, USA
Print_ISBN
0-7803-6369-8
Type
conf
DOI
10.1109/APS.2000.873827
Filename
873827
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