Photosensing Properties of Pentacene OFETs Based on a Novel PMMA Copolymer Gate Dielectric

Author

Loffredo, F. ; Grimaldi, I.A. ; Miscioscia, R. ; Nenna, G. ; Villani, F. ; Minarini, C. ; Petrosino, M. ; Rubino, A. ; Usta, H. ; Facchetti, A.

Author_Institution

ENEA Portici Res. Center, Portici, Italy

Volume

11

Issue

6

fYear

2015

fDate

Jun-15

Firstpage

533

Lastpage

540

Abstract

In the present work, bottom-gate top-contact organic field effect transistors (OFETs) were fabricated by evaporating a pentacene semiconductor film on top of a new insulating poly(methyl methacrylate) (PMMA) copolymer containing methacrylate units. The PMMA copolymer was synthesized in order to combine the well-known insulating properties of PMMA with the possibility to be efficiently photocured enabling photopatterning-based organic circuitry integration processes. The properties of the pentacene layer deposited on ITO/PMMA copolymer stack were studied through morphological and structural analyses. Device photoresponses and photoexcitated transients were investigated and compared to reference devices based on standard PMMA gate dielectric.

Keywords

dielectric devices; dielectric materials; organic field effect transistors; organic insulating materials; photodetectors; polymer blends; semiconductor thin films; ITO-PMMA copolymer stack; PMMA copolymer gate dielectric; bottom-gate top-contact organic field effect transistor; evaporation; insulating poly(methyl methacrylate) copolymer; pentacene OFET; pentacene semiconductor film; photoexcitated transient; photopatterning-based organic circuitry integration processing; photoresponse; photosensing property; Dielectrics; Films; Logic gates; OFETs; Pentacene; Semiconductor device measurement; Temperature measurement; PMMA copolymer; Photocurable gate dielectric; pentacene; photoresponse; phototransistor;

fLanguage

English

Journal_Title

Display Technology, Journal of

Publisher

ieee

ISSN

1551-319X

Type

jour

DOI

10.1109/JDT.2014.2363685

Filename

6928475