Title :
60GHz GaAs MMIC low noise amplifier
Author :
Li, Oupeng ; Xu, Yuehang ; Guo, Yunchuan ; Wang, Lei ; Xu, Ruimin ; Yan, Bo
Author_Institution :
Fundamental Sci. on EHF Lab., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
In this paper, a monolithic V-band low noise amplifier (LNA) is presented by using 0.15μm gate length GaAs/InGaAs/AlGaAs pseudomorphic HEMT technology. The LNA is consisted by 4 stages 4×30μm gate width transistors. The total circuit achieves 2.2-2.7 dB noise figure with more than 16dB associate gain from 57GHz to 66GHz, and the saturation output power reaches 15dBm. The chip area is 2.1mm×1.5mm.
Keywords :
III-V semiconductors; MMIC amplifiers; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; low noise amplifiers; millimetre wave amplifiers; GaAs MMIC; GaAs-InGaAs-AlGaAs; frequency 57 GHz to 66 GHz; low noise amplifier; monolithic V-band amplifier; noise figure 2.2 dB to 2.7 dB; pseudomorphic HEMT technology; Gain; Gallium arsenide; Integrated circuit modeling; Logic gates; MMICs; Noise figure; Power amplifiers;
Conference_Titel :
Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4673-2184-6
DOI :
10.1109/ICMMT.2012.6229981
