• DocumentCode
    2489866
  • Title

    Yield enhancement prediction with statistical process simulations in an advanced poly-emitter complementary bipolar technology

  • Author

    López-Serrano, éJosé ; Koh, Song W. ; Crandell, Thomas L. ; Delgado, Jose A. ; Nicolay, Hugh C. ; Haycock, Thomas L. ; Strojwas, Andrzej J.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA
  • fYear
    1994
  • fDate
    1-4 May 1994
  • Firstpage
    289
  • Lastpage
    292
  • Abstract
    This paper presents an approach for yield enhancement using TCAD tools in a state-of-the-art custom IC fabrication process. We have shown that yield can be correctly predicted, which allows the use of TCAD tools for yield enhancement. The proposed methodology proved to be significantly faster and more cost-effective than the traditional approach involving fabline experiments. As the most important part of this work, we identified reasons for yield loss in an advanced poly-emitter complementary bipolar technology, and predicted a 15% yield improvement with a change in the process flow, which was confirmed by the measured results
  • Keywords
    VLSI; bipolar integrated circuits; electronic engineering computing; integrated circuit yield; semiconductor process modelling; statistical analysis; TCAD tools; custom IC fabrication process; poly-emitter complementary bipolar technology; statistical process simulations; technology CAD; yield enhancement prediction; yield loss; Circuit synthesis; Costs; Fabrication; Fluid flow measurement; Integrated circuit yield; Loss measurement; Manufacturing processes; Predictive models; Very large scale integration; Yield estimation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Custom Integrated Circuits Conference, 1994., Proceedings of the IEEE 1994
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    0-7803-1886-2
  • Type

    conf

  • DOI
    10.1109/CICC.1994.379717
  • Filename
    379717