DocumentCode :
2489866
Title :
Yield enhancement prediction with statistical process simulations in an advanced poly-emitter complementary bipolar technology
Author :
López-Serrano, éJosé ; Koh, Song W. ; Crandell, Thomas L. ; Delgado, Jose A. ; Nicolay, Hugh C. ; Haycock, Thomas L. ; Strojwas, Andrzej J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA
fYear :
1994
fDate :
1-4 May 1994
Firstpage :
289
Lastpage :
292
Abstract :
This paper presents an approach for yield enhancement using TCAD tools in a state-of-the-art custom IC fabrication process. We have shown that yield can be correctly predicted, which allows the use of TCAD tools for yield enhancement. The proposed methodology proved to be significantly faster and more cost-effective than the traditional approach involving fabline experiments. As the most important part of this work, we identified reasons for yield loss in an advanced poly-emitter complementary bipolar technology, and predicted a 15% yield improvement with a change in the process flow, which was confirmed by the measured results
Keywords :
VLSI; bipolar integrated circuits; electronic engineering computing; integrated circuit yield; semiconductor process modelling; statistical analysis; TCAD tools; custom IC fabrication process; poly-emitter complementary bipolar technology; statistical process simulations; technology CAD; yield enhancement prediction; yield loss; Circuit synthesis; Costs; Fabrication; Fluid flow measurement; Integrated circuit yield; Loss measurement; Manufacturing processes; Predictive models; Very large scale integration; Yield estimation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Custom Integrated Circuits Conference, 1994., Proceedings of the IEEE 1994
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-1886-2
Type :
conf
DOI :
10.1109/CICC.1994.379717
Filename :
379717
Link To Document :
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