Title :
Design of Ku band GaN power HEMT with 3D electromagnetic characterization
Author :
Qin Ge ; Xinyu Liu ; Xiaojuan Chen ; Weijun Luo
Author_Institution :
Key Lab. of Microwave Devices & Integrated Circuit, Inst. of Microelectron., Beijing, China
Abstract :
An internally matched GaN power HEMT has been realized at Ku band with a newly developed three-dimensional (3D) electromagnetic (EM) design technique, in which the internal matching networks are 3D modeled and characterized, as a whole. This single chip device with 4mm gate width delivers 17.8W power output with more than 30% PAE over 13.8 to 14.3GHz with few adjustments after assembling.
Keywords :
III-V semiconductors; gallium compounds; microwave devices; power HEMT; power semiconductor devices; semiconductor device models; wide band gap semiconductors; 3D electromagnetic characterization; Ku band power HEMT; frequency 13.8 GHz to 14.3 GHz; internal matching networks; power 17.8 W; size 4 mm; three-dimensional electromagnetic design technique; Gallium nitride; HEMTs; Integrated circuit modeling; Logic gates; Microwave circuits; Solid modeling; GaN; Ku-band; Power HEMT; electromagnetic; three-dimensional;
Conference_Titel :
Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4673-2184-6
DOI :
10.1109/ICMMT.2012.6229989
