Design of Ku band GaN power HEMT with 3D electromagnetic characterization

Author

Qin Ge ; Xinyu Liu ; Xiaojuan Chen ; Weijun Luo

Author_Institution

Key Lab. of Microwave Devices & Integrated Circuit, Inst. of Microelectron., Beijing, China

Volume

1

fYear

2012

fDate

5-8 May 2012

Firstpage

1

Lastpage

3

Abstract

An internally matched GaN power HEMT has been realized at Ku band with a newly developed three-dimensional (3D) electromagnetic (EM) design technique, in which the internal matching networks are 3D modeled and characterized, as a whole. This single chip device with 4mm gate width delivers 17.8W power output with more than 30% PAE over 13.8 to 14.3GHz with few adjustments after assembling.

Keywords

III-V semiconductors; gallium compounds; microwave devices; power HEMT; power semiconductor devices; semiconductor device models; wide band gap semiconductors; 3D electromagnetic characterization; Ku band power HEMT; frequency 13.8 GHz to 14.3 GHz; internal matching networks; power 17.8 W; size 4 mm; three-dimensional electromagnetic design technique; Gallium nitride; HEMTs; Integrated circuit modeling; Logic gates; Microwave circuits; Solid modeling; GaN; Ku-band; Power HEMT; electromagnetic; three-dimensional;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on

Conference_Location

Shenzhen

Print_ISBN

978-1-4673-2184-6

Type

conf

DOI

10.1109/ICMMT.2012.6229989

Filename

6229989