DocumentCode
2489935
Title
High sensitivity, low power, silicon magnetic field detector
Author
Doyle, John ; Lyden, Colin
Author_Institution
Nat. Microelectron. Res. Centre, Univ. Coll. Cork, Ireland
fYear
1994
fDate
1-4 May 1994
Firstpage
275
Lastpage
277
Abstract
A CMOS magnetic field sensitive oscillator is presented. The device is aimed at a very low power application, where small size is essential. When subjected to a 10 Gauss magnetic field, it registers a 3 Hz change in frequency, which is readily detectable and above the noise floor, while drawing only 100 nA from a 2 V supply. This represents a factor of thirty improvement in sensitivity over previously reported devices and the highest sensitivity/power ratio reported to date for a silicon magnetic field sensor
Keywords
CMOS analogue integrated circuits; elemental semiconductors; magnetic field measurement; magnetic sensors; silicon; variable-frequency oscillators; 100 nA; 2 V; CMOS magnetic field sensitive oscillator; MAGFET; Si; VFO; high sensitivity detection; low power operation; magnetic field detector; Detectors; Frequency; Gaussian noise; Gaussian processes; Magnetic circuits; Magnetic fields; Magnetic noise; Magnetic sensors; Oscillators; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference, 1994., Proceedings of the IEEE 1994
Conference_Location
San Diego, CA
Print_ISBN
0-7803-1886-2
Type
conf
DOI
10.1109/CICC.1994.379720
Filename
379720
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