• DocumentCode
    2489953
  • Title

    Self-adjusting threshold-voltage scheme (SATS) for low-voltage high-speed operation

  • Author

    Kobayashi, Tsuguo ; Sakurai, Takayasu

  • Author_Institution
    Microelectron Center, Toshiba America Electron. Components Inc., USA
  • fYear
    1994
  • fDate
    1-4 May 1994
  • Firstpage
    271
  • Lastpage
    274
  • Abstract
    A circuit technique to reduce threshold voltage fluctuation by a use of self-substrate-bias is introduced. The substrate bias is controlled so that leakage current of a representative MOSFET is adjusted constant with a feedback loop. The threshold voltage can be controlled within ±0.05 V and the speed gains under 1.5 V and 1V VDD are estimated to be a factor of 1.3 and 3, respectively. A test chip is fabricated and effectiveness of the scheme is investigated
  • Keywords
    CMOS integrated circuits; MOSFET; circuit feedback; integrated circuit design; leakage currents; voltage control; 1 to 1.5 V; CMOS IC; LV high-speed operation; MOSFET; circuit technique; feedback loop; leakage current; low-voltage operation; self-adjusting threshold-voltage scheme; self-substrate-bias; threshold voltage fluctuation reduction; Amplitude modulation; Fluctuations; Leakage current; MOSFET circuits; Streaming media; Substrates; Switches; Threshold voltage; Very large scale integration; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Custom Integrated Circuits Conference, 1994., Proceedings of the IEEE 1994
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    0-7803-1886-2
  • Type

    conf

  • DOI
    10.1109/CICC.1994.379721
  • Filename
    379721
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2489953