Title :
Self-adjusting threshold-voltage scheme (SATS) for low-voltage high-speed operation
Author :
Kobayashi, Tsuguo ; Sakurai, Takayasu
Author_Institution :
Microelectron Center, Toshiba America Electron. Components Inc., USA
Abstract :
A circuit technique to reduce threshold voltage fluctuation by a use of self-substrate-bias is introduced. The substrate bias is controlled so that leakage current of a representative MOSFET is adjusted constant with a feedback loop. The threshold voltage can be controlled within ±0.05 V and the speed gains under 1.5 V and 1V VDD are estimated to be a factor of 1.3 and 3, respectively. A test chip is fabricated and effectiveness of the scheme is investigated
Keywords :
CMOS integrated circuits; MOSFET; circuit feedback; integrated circuit design; leakage currents; voltage control; 1 to 1.5 V; CMOS IC; LV high-speed operation; MOSFET; circuit technique; feedback loop; leakage current; low-voltage operation; self-adjusting threshold-voltage scheme; self-substrate-bias; threshold voltage fluctuation reduction; Amplitude modulation; Fluctuations; Leakage current; MOSFET circuits; Streaming media; Substrates; Switches; Threshold voltage; Very large scale integration; Voltage control;
Conference_Titel :
Custom Integrated Circuits Conference, 1994., Proceedings of the IEEE 1994
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-1886-2
DOI :
10.1109/CICC.1994.379721
