DocumentCode :
2489984
Title :
Design of a high frequency low-power LNA
Author :
Xusheng Tang ; Fengyi Huang
Author_Institution :
Nat. Mobile Commun. Res. Lab., Southeast Univ., Nanjing, China
Volume :
1
fYear :
2012
fDate :
5-8 May 2012
Firstpage :
1
Lastpage :
4
Abstract :
A 4.5-GHz low-noise amplifier (LNA) utilizing a current-reused technique and a simple LC matching network is proposed. The implemented LNA presents a maximum gain of 35.22-dB by using inductive peaking technique, and a good input matching of 50Ω in the required band. An excellent noise figure (NF) of 2.255-dB was obtained in the frequency range of 4.5-GHz with a power dissipation of 5.04mW under a 1.2-V power supply, and achieve input return loss (S11) of -21.96-dB, output return loss (S22) of -17.84-dB, and reverse interest (S12) of -66.38dB. This work is implemented based on SMIC 0.13μm CMOS technology.
Keywords :
CMOS analogue integrated circuits; LC circuits; analogue integrated circuits; integrated circuit design; low noise amplifiers; low-power electronics; microwave integrated circuits; CMOS technology; current-reused technique; frequency 4.5 GHz; gain 35.22 dB; high frequency low-power LNA design; inductive peaking technique; loss -17.84 dB; loss -21.96 dB; loss -66.38 dB; low-noise amplifier; noise figure; noise figure 2.255 dB; power 5.04 mW; resistance 50 ohm; simple LC matching network; size 0.13 mum; voltage 1.2 V; CMOS integrated circuits; Capacitors; Inductors; Low-noise amplifiers; Noise; Noise figure; Resistance; High gain; Low noise amplifier (LNA); Low power dissipation; Noise figure (NF);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4673-2184-6
Type :
conf
DOI :
10.1109/ICMMT.2012.6229994
Filename :
6229994
Link To Document :
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