• DocumentCode
    2490015
  • Title

    An accurate broadband equivalent circuit model of millimeter wave planar Schottky varistor diodes

  • Author

    Chen, Zhenhua ; Xu, Jinping ; Ding, Dezhi

  • Author_Institution
    State Key Lab. of Millimeter Waves, Southeast Univ., Nanjing, China
  • Volume
    1
  • fYear
    2012
  • fDate
    5-8 May 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A Broadband equivalent circuit model of a planar Schottky varistor diode is presented in this article to improve the accuracy of circuit design. Take advantage of a combination of 3-D full wave EM analysis and lumped parameters extraction approach, all the geometry-dependent parasitic elements are taken into account according to physical dimension of the diode, based on which the broadband equivalent circuit model is established. Herein, a T-type network is adopted to account for discontinuities between diode finger and pad. Effect of ambient channel around the diode together with losses caused by the diode material at millimeter wavelength is considered to improve the practical frequency response of the diode chip. Analysis results indicate that the characteristic of the diode especially the phase accuracy is greatly improved with the proposed model. To verify the validity of the circuit model, a prototype of W-band frequency tripler covering 75-110 GHz employing this model is designed and fabricated. The measured conversion loss is in agreement with the theoretical prediction.
  • Keywords
    Schottky diodes; equivalent circuits; frequency convertors; frequency response; millimetre wave diodes; varistors; 3D full wave EM analysis; T-type network; W-band frequency tripler; ambient channel; broadband equivalent circuit model; circuit design; conversion loss; diode chip; diode finger; frequency 75 GHz to 110 GHz; frequency response; lumped parameters extraction; millimeter wave planar Schottky varistor diodes; phase accuracy; Equivalent circuits; Frequency measurement; Gallium arsenide; Integrated circuit modeling; Schottky diodes; Semiconductor process modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on
  • Conference_Location
    Shenzhen
  • Print_ISBN
    978-1-4673-2184-6
  • Type

    conf

  • DOI
    10.1109/ICMMT.2012.6229996
  • Filename
    6229996