Title :
Anisotropy and Non-Uniformity Effects on the Strain Relaxation in GaInAsP/InP Quantum Wire Structures
Author :
Ferdous, Fahmida ; Haque, A.
Author_Institution :
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka
Abstract :
Calculation of the strain relaxation in membrane GaInAsP/InP quantum wire laser is performed using finite element method. Effect of strain-compensating barriers in multiple quantum wire stacks on the strain relaxation is investigated using both isotropic and anisotropic models. It is found that the difference between the two results increases when the wires are narrower and this effect is more pronounced in the barrier regions
Keywords :
III-V semiconductors; arsenic compounds; finite element analysis; gallium compounds; indium compounds; magnetic anisotropy; quantum well lasers; relaxation; GaInAsP-InP; anisotropic models; anisotropy effect; finite element method; isotropic models; nonuniformity effect; quantum wire laser; strain relaxation; strain-compensating barriers; Anisotropic magnetoresistance; Biomembranes; Capacitive sensors; Equations; Finite element methods; Indium phosphide; Quantum computing; Quantum well lasers; Semiconductor lasers; Wire;
Conference_Titel :
Electrical and Computer Engineering, 2006. ICECE '06. International Conference on
Conference_Location :
Dhaka
Print_ISBN :
98432-3814-1
DOI :
10.1109/ICECE.2006.355285
