A 10W broadband power amplifier for base station

Author

Dai, Dajie ; Sun, Lingling ; Wen, Jincai ; Su, Guodong ; Guo, Lui

Author_Institution

Key Lab. for RF Circuits & Syst. of Minist. of Educ., Hangzhou Dianzi Univ., Hangzhou, China

Volume

1

fYear

2012

fDate

5-8 May 2012

Firstpage

1

Lastpage

4

Abstract

This paper presents the design of a broadband power amplifier with high-efficiency using silicon LDMOSFETs. With comparing frequency response of single LC matching network and two-stage one, a multiple LC matching networks composed of micro-strip lines and capacitors were adopted to enhance the bandwidth. A broadband power amplifier was implemented based on a packaged Si-LDMOS power transistor, and a saturated output power of 15 W and power gain of 14.5 dB at 1-dB compression point with maximum power-added efficiency (PAE) of 50% are demonstrated from 1.8GHz to 2.0GHz in this work.

Keywords

MOS integrated circuits; UHF power amplifiers; capacitors; elemental semiconductors; frequency response; integrated circuit design; microstrip lines; silicon; wideband amplifiers; LC matching network; Si; base station; broadband power amplifier; capacitors; frequency 1.8 GHz to 2 GHz; frequency response; gain 14.5 dB; microstrip lines; packaged power transistor; power 10 W; power 15 W; power-added efficiency; silicon LDMOSFET; broadband matching network; microstrip line; power added efficiency; power amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on

Conference_Location

Shenzhen

Print_ISBN

978-1-4673-2184-6

Type

conf

DOI

10.1109/ICMMT.2012.6230005

Filename

6230005