Title :
A 10W broadband power amplifier for base station
Author :
Dai, Dajie ; Sun, Lingling ; Wen, Jincai ; Su, Guodong ; Guo, Lui
Author_Institution :
Key Lab. for RF Circuits & Syst. of Minist. of Educ., Hangzhou Dianzi Univ., Hangzhou, China
Abstract :
This paper presents the design of a broadband power amplifier with high-efficiency using silicon LDMOSFETs. With comparing frequency response of single LC matching network and two-stage one, a multiple LC matching networks composed of micro-strip lines and capacitors were adopted to enhance the bandwidth. A broadband power amplifier was implemented based on a packaged Si-LDMOS power transistor, and a saturated output power of 15 W and power gain of 14.5 dB at 1-dB compression point with maximum power-added efficiency (PAE) of 50% are demonstrated from 1.8GHz to 2.0GHz in this work.
Keywords :
MOS integrated circuits; UHF power amplifiers; capacitors; elemental semiconductors; frequency response; integrated circuit design; microstrip lines; silicon; wideband amplifiers; LC matching network; Si; base station; broadband power amplifier; capacitors; frequency 1.8 GHz to 2 GHz; frequency response; gain 14.5 dB; microstrip lines; packaged power transistor; power 10 W; power 15 W; power-added efficiency; silicon LDMOSFET; broadband matching network; microstrip line; power added efficiency; power amplifier;
Conference_Titel :
Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4673-2184-6
DOI :
10.1109/ICMMT.2012.6230005
