Title :
A new deep submicron compact physical model for analog circuits
Author :
Cho, Dae-Hyung ; Kang, S.M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
This paper presents a new deep submicron compact physical model for analog circuit simulation. The proposed model, iSIM, shows not only excellent moderate inversion characteristics for both DC and AC models but also the continuity of currents, conductances, and transcapacitances in all regions of operation. The model evaluation time of iSIM is only half of the SPICE level 2 model
Keywords :
MOS integrated circuits; VLSI; circuit analysis computing; digital simulation; integrated circuit modelling; mixed analogue-digital integrated circuits; AC models; DC models; MOS transistors; VLSI; analog circuits; circuit simulation; conductance continuity; current continuity; deep submicron compact physical model; iSIM; mixed analog-digital chips; model evaluation time; moderate inversion characteristics; transcapacitances; Analog circuits; Analog-digital conversion; Circuit simulation; Doping; Function approximation; MOSFET circuits; Predictive models; SPICE; Semiconductor process modeling; Threshold voltage;
Conference_Titel :
Custom Integrated Circuits Conference, 1994., Proceedings of the IEEE 1994
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-1886-2
DOI :
10.1109/CICC.1994.379770
