DocumentCode
2490910
Title
Trends in devices for low power
Author
Reuss, Robert H. ; Mastroianni, Sal ; Ooms, Bill ; Hwang, Bor-Yuan ; Sun, Shih-Wei
Author_Institution
Autom. Energy & Controls Group., Motorola Inc., Northbrook, IL, USA
fYear
1994
fDate
1-4 May 1994
Firstpage
19
Lastpage
22
Abstract
This paper summarizes the trends in device structures for low power (voltage) operation. Product driving forces and the expected evolution of standard CMOS are described to provide context for the presentation. Alternatives to CMOS to achieve enhanced performance-cost objectives include engineered CMOS, thin-film SOI, BiCMOS, and complementary GaAs. An assessment of the status, advantages, and limitations of each is offered
Keywords
BiCMOS integrated circuits; CMOS integrated circuits; gallium arsenide; integrated circuit technology; silicon-on-insulator; 1 to 3.3 V; BiCMOS; GaAs; Si; TFSOI; complementary GaAs; engineered CMOS; low power devices; low voltage operation; standard CMOS; thin-film SOI; Automotive engineering; BiCMOS integrated circuits; CMOS technology; Costs; Delay; Laboratories; Low voltage; Power engineering and energy; Random access memory; Research and development;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference, 1994., Proceedings of the IEEE 1994
Conference_Location
San Diego, CA
Print_ISBN
0-7803-1886-2
Type
conf
DOI
10.1109/CICC.1994.379775
Filename
379775
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