Title :
Trends in devices for low power
Author :
Reuss, Robert H. ; Mastroianni, Sal ; Ooms, Bill ; Hwang, Bor-Yuan ; Sun, Shih-Wei
Author_Institution :
Autom. Energy & Controls Group., Motorola Inc., Northbrook, IL, USA
Abstract :
This paper summarizes the trends in device structures for low power (voltage) operation. Product driving forces and the expected evolution of standard CMOS are described to provide context for the presentation. Alternatives to CMOS to achieve enhanced performance-cost objectives include engineered CMOS, thin-film SOI, BiCMOS, and complementary GaAs. An assessment of the status, advantages, and limitations of each is offered
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; gallium arsenide; integrated circuit technology; silicon-on-insulator; 1 to 3.3 V; BiCMOS; GaAs; Si; TFSOI; complementary GaAs; engineered CMOS; low power devices; low voltage operation; standard CMOS; thin-film SOI; Automotive engineering; BiCMOS integrated circuits; CMOS technology; Costs; Delay; Laboratories; Low voltage; Power engineering and energy; Random access memory; Research and development;
Conference_Titel :
Custom Integrated Circuits Conference, 1994., Proceedings of the IEEE 1994
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-1886-2
DOI :
10.1109/CICC.1994.379775
