Analytical Study of Erbium-Doped Silicon Lasers

Operation of erbium doped silicon laser has been analytically studied. A quasi two level system has been considered. Spontaneous and stimulated processes involving the ⁴I_13/2 - ⁴I_15/2 erbium transitions have been analyzed. Threshold conditions of erbium excitation and the corresponding drive currents have been calculated. Optical output from laser and its dependence on system parameters like background doping, emission linewidth, etc. have been studied. For typical values of erbium doping and laser cavity dimensions, output power in milliwatt range with turn-on delay of the order of 500 ns has been estimated.