Title :
Improvement of electrical characteristics of fluorinated perylene diimide thin-film transistors by gate dielectric surface treatment
Author :
Yang, Li-Gong ; Huang, Jia-Chi ; Li, Rong-jin ; Shi, Min-Min ; Gao, Yan ; Wang, Mang ; Hu, Wen-Ping ; Chen, Hong-Zheng
Abstract :
The structural and electrical properties of n-channel OTFTs based on N,N´-(4-monofluorophenyl)-3,4,9,10-perylene tetracarboxylic diimide (D4MFPP) were investigated. The influence of surface treatment on the mobility and the interface traps were quantitatively evaluated.
Keywords :
interface states; surface treatment; thin film transistors; N,N´-(4-monofluorophenyl)-3,4,9,10-perylene tetracarboxylic diimide; electrical properties; fluorinated perylene diimide thin-film transistors; gate dielectric surface treatment; interface traps; n-channel OTFTs; structural properties; surface treatment; Dielectric substrates; Electric variables; Electrodes; Electron traps; Organic thin film transistors; Rough surfaces; Silicon; Surface morphology; Surface treatment; Thin film transistors;
Conference_Titel :
Optical Fiber Communication and Optoelectronics Conference, 2007 Asia
Conference_Location :
Shanghai
Print_ISBN :
978-0-9789217-2-9
Electronic_ISBN :
978-0-9789217-2-9
DOI :
10.1109/AOE.2007.4410768
