Raman Scattering Study on Mn Composition in Diluted Magnetic Semiconductor Gal-xMnXSb Prepared by LPE Method

Raman scattering experiments have been performed in diluted magnetic semiconductor Ga_{1 - x}Mn_xSb prepared by liquid phase epitaxy. The Raman spectra measured from various Ga_{1 - x}Mn_xSb samples show GaSb-like phonon modes, which are found to be shifted in lower frequency direction due to Mn composition. The compositional dependence of LO_GsSb phonon frequency has been suggested with the combination of Raman scattering and energy dispersive X-ray (EDX) experiments. Using the compositional dependence of LO_GsSb, the Mn compositions estimated from various Ga_{1 - x}Mn_xSb samples are found to be in good agreement with those evaluated by EDX analysis. Furthermore, the frequency positions of MnSb-like phonon modes are determined by reduced-mass model.