Prospect of soft switching power converter technologies

Author

Trivedi, M. ; Shenai, K.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Illinois Univ., Chicago, IL, USA

fYear

1998

fDate

22-25 Jun 1998

Firstpage

119

Lastpage

122

Abstract

This paper reports a detailed study of hard and soft-switching performance of high power unipolar and bipolar silicon transistors. Extensive measurements and rigorous two-dimensional (2-D) simulations are used to understand the switching dynamics of power bipolar transistors, power MOSFETs, and insulated gate bipolar transistors (IGBT) in zero-voltage and zero-current switching conditions. It is shown that these devices exhibit distinct switching characteristics during turn-off under various switching conditions

Keywords

insulated gate bipolar transistors; power MOSFET; power bipolar transistors; power convertors; power semiconductor switches; semiconductor device measurement; semiconductor device models; semiconductor device testing; switching circuits; 2-D simulations; measurements; power IGBTs; power MOSFETs; power bipolar transistors; soft-switching power converter technologies; switching dynamics; switching performance; turn-off switching characteristics; zero-current switching; zero-voltage switching; Circuit testing; Circuit topology; Insulated gate bipolar transistors; MOSFETs; Motor drives; Power electronics; Power semiconductor switches; Resonance; Switching converters; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Modulator Symposium, 1998. Conference Record of the 1998 Twenty-Third International

Conference_Location

Rancho Mirage, CA

ISSN

1076-8467

Print_ISBN

0-7803-4244-5

Type

conf

DOI

10.1109/MODSYM.1998.741207

Filename

741207