High-IF Sampling Continuous-Time Bandpass Δ Σ Modulator

Author

Mariano, A.A. ; Dallet, D. ; Deval, Y. ; Begueret, J.-B.

Author_Institution

Integrated Circuits Design Team, Bordeaux Univ.

fYear

2006

fDate

12-15 June 2006

Firstpage

129

Lastpage

132

Abstract

A fourth-order integrated LC bandpass delta-sigma modulator is presented. It is designed in a 0.25 mum BiCMOS SiGe:C process from STMicroelectronics. The modulator can directly digitize high intermediate signals in a 20MHz bandwidth. It employs two integrated LC resonators with active Q-enhancement circuits. A multi-feedback architecture is used to achieve higher order noise-shaping, while maintaining the modulator stability. A multibit quantizer was implemented to reduce quantization noise and improve stability

Keywords

BiCMOS integrated circuits; Ge-Si alloys; band-pass filters; carbon; continuous time filters; integrated circuit design; integrated circuit noise; quantisation (signal); resonators; sigma-delta modulation; 0.25 micron; 20 MHz; BiCMOS process; SiGe:C; SigmaDelta modulator; active Q-enhancement circuits; continuous-time bandpass modulator; higher order noise-shaping; integrated LC resonators; multibit quantizer; multifeedback architecture; quantization noise; Bandwidth; BiCMOS integrated circuits; Circuit stability; Delta modulation; Digital modulation; Noise reduction; Noise shaping; Quantization; Sampling methods; Signal sampling;

fLanguage

English

Publisher

ieee

Conference_Titel

Research in Microelectronics and Electronics 2006, Ph. D.

Conference_Location

Otranto

Print_ISBN

1-4244-0157-7

Type

conf

DOI

10.1109/RME.2006.1689913

Filename

1689913