• DocumentCode
    2491695
  • Title

    Phosphor-free white-light light-emitting diodes based on InGaN/GaN quantum wells

  • Author

    Huang, Chi-Feng ; Lu, Chih-Feng ; Yeh, Dong-Ming ; Chen, Yung-Sheng ; Shiao, Wen-Yu ; Yang, C.C.

  • Author_Institution
    Nat. Taiwan Univ., Taipei
  • fYear
    2007
  • fDate
    17-19 Oct. 2007
  • Firstpage
    351
  • Lastpage
    353
  • Abstract
    Two approaches for fabricating white-light light-emitting diodes are discussed, including the stacking of various InGaN/GaN quantum wells for mixing into white light and the use of ll-VI nano-crystals for converting short-wavelength photons into long-wavelength light.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; optical fabrication; quantum well devices; semiconductor quantum wells; InGaN-GaN; ll-VI nano-crystals; long-wavelength light; phosphor-free white-light light-emitting diodes; quantum wells; short-wavelength photons; Coatings; Fabrication; Gallium nitride; Indium; Light emitting diodes; MOCVD; Phosphors; Photonic band gap; Stacking; Zinc compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Fiber Communication and Optoelectronics Conference, 2007 Asia
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-0-9789217-2-9
  • Electronic_ISBN
    978-0-9789217-2-9
  • Type

    conf

  • DOI
    10.1109/AOE.2007.4410804
  • Filename
    4410804
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2491695