Title :
Phosphor-free white-light light-emitting diodes based on InGaN/GaN quantum wells
Author :
Huang, Chi-Feng ; Lu, Chih-Feng ; Yeh, Dong-Ming ; Chen, Yung-Sheng ; Shiao, Wen-Yu ; Yang, C.C.
Author_Institution :
Nat. Taiwan Univ., Taipei
Abstract :
Two approaches for fabricating white-light light-emitting diodes are discussed, including the stacking of various InGaN/GaN quantum wells for mixing into white light and the use of ll-VI nano-crystals for converting short-wavelength photons into long-wavelength light.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; optical fabrication; quantum well devices; semiconductor quantum wells; InGaN-GaN; ll-VI nano-crystals; long-wavelength light; phosphor-free white-light light-emitting diodes; quantum wells; short-wavelength photons; Coatings; Fabrication; Gallium nitride; Indium; Light emitting diodes; MOCVD; Phosphors; Photonic band gap; Stacking; Zinc compounds;
Conference_Titel :
Optical Fiber Communication and Optoelectronics Conference, 2007 Asia
Conference_Location :
Shanghai
Print_ISBN :
978-0-9789217-2-9
Electronic_ISBN :
978-0-9789217-2-9
DOI :
10.1109/AOE.2007.4410804
