Schottky diodes with the cutoff frequency of 2.6 THz and its applications in focal imaging array

Author

Mou, Jin-Chao ; Xu, Ming-Ming ; Chen, Ling ; Wang, Zhi-Ming ; Yu, Wei-Hua ; Lv, Xin

Author_Institution

Lab. of Microwave Commun. & Electron. Syst., Beijing Inst. of Technol., Beijing, China

Volume

2

fYear

2012

fDate

5-8 May 2012

Firstpage

1

Lastpage

4

Abstract

This paper presents some critical techniques of the terahertz focal imaging system. As the key nonlinear devices in the focal plane array, the Schottky diodes with the cutoff frequency of 2.6 THz are designed and fabricated. Based on the Schottky diodes, the quasi-optical mixers are designed and realized using the GaAs Schottky diode process, which consists of the planar antennas on chip, the Schottky diodes and high resistivity lens. According to the Nyquist sampling theorem, a 220 GHz 1×6 focal plane array is designed and analyzed.

Keywords

III-V semiconductors; Schottky diode mixers; focal planes; gallium arsenide; submillimetre wave diodes; submillimetre wave mixers; terahertz wave imaging; GaAs; Nyquist sampling theorem; Schottky diode process; cutoff frequency; focal imaging array; focal plane array; frequency 2.6 THz; frequency 220 THz; high resistivity lens; nonlinear devices; planar antennas; quasioptical mixers; terahertz focal imaging system; Arrays; Microwave imaging; Microwave theory and techniques; Mixers; Receivers; Schottky diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on

Conference_Location

Shenzhen

Print_ISBN

978-1-4673-2184-6

Type

conf

DOI

10.1109/ICMMT.2012.6230112

Filename

6230112