DocumentCode
2492592
Title
An improved selective area growth method in fabrication of electroabsorption modulated laser
Author
Wang, Huan ; Zhu, Hongliang ; Cheng, Yuanbing ; Chen, Dingbo ; Zhang, Wei ; Wang, Liesong ; Zhang, Yunxiao ; Sun, Yu ; Wang, Wei
Author_Institution
CAS, Beijing
fYear
2007
fDate
17-19 Oct. 2007
Firstpage
490
Lastpage
492
Abstract
An improved selective area growth (SAG) method is proposed to better the fabrication and performance of the Electroabsorption modulated laser. The typical threshold current of the EML is 18 mA, and the output power is 5.6 mW at EAM facet.
Keywords
MOCVD; distributed feedback lasers; electroabsorption; optical modulation; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; DFB laser; current 18 mA; electroabsorption modulated laser; laser fabrication; metal-organic vapor phase epitaxy; power 5.6 mW; selective area growth; semiconductor laser; Absorption; Bragg gratings; Chirp modulation; Contacts; Content addressable storage; Indium phosphide; Laboratories; Optical device fabrication; Optical modulation; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communication and Optoelectronics Conference, 2007 Asia
Conference_Location
Shanghai
Print_ISBN
978-0-9789217-2-9
Electronic_ISBN
978-0-9789217-2-9
Type
conf
DOI
10.1109/AOE.2007.4410851
Filename
4410851
Link To Document