DocumentCode
2492599
Title
Thin SQI NEMS accelerometers compatible with In-IC integration
Author
Oilier, E. ; Duraffourg, L. ; Delaye, M. ; Deneuville, S. ; Nguyen, V. ; Andreucci, P. ; Grange, H. ; Robert, P. ; Marchi, F. ; Dianoux, R. ; Baron, Thomas
Author_Institution
CEA-LETI, Grenoble
fYear
2006
fDate
22-25 Oct. 2006
Firstpage
54
Lastpage
57
Abstract
The paper presents thin SOI NEMS structures for accelerometers based on thin SOI technology and compatible with "In-IC" integration. The goal of this work is to demonstrate the feasibility in terms of concept and technological manufacturing. Modeling of Casimir force, development of hybrid e-beam/DUV lithography and FH-vapor release, specific AFM characterizations have allowed to design, fabricate and characterize first devices.
Keywords
Casimir effect; accelerometers; microsensors; silicon-on-insulator; AFM characterizations; Casimir force; FH-vapor release; In-IC integration; SOI technology; hybrid e-beam/DUV lithography; nano-electro-mechanical-systems; thin SOI NEMS accelerometers; Acceleration; Accelerometers; CMOS technology; Costs; Delay; Electrostatics; Integrated circuit packaging; Nanoelectromechanical systems; Resonance; Springs;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2006. 5th IEEE Conference on
Conference_Location
Daegu
ISSN
1930-0395
Print_ISBN
1-4244-0375-8
Electronic_ISBN
1930-0395
Type
conf
DOI
10.1109/ICSENS.2007.355716
Filename
4178554
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