Title :
High frequency pulse generation using a gain-switched commercial semiconductor laser with strong external injection
Author :
Anandarajah, P. ; Kaszubowska, A. ; Barry, L.P.
Author_Institution :
Sch. of Electron. Eng., Dublin City Univ., Ireland
Abstract :
We experimentally demonstrate how strong external-injection into a commercial semiconductor diode increases the laser bandwidth such that gain-switched pulses can be generated at frequencies up to 20 GHz (which is far in excess of the lasers inherent bandwidth). The optical pulses generated have pulse widths around 15 ps, and spectral widths of 35 GHz, giving a time-bandwidth product of 0.52, which is close to the transform limit for Gaussian pulses
Keywords :
electro-optical modulation; optical pulse generation; semiconductor lasers; Fabry-Perot laser; Gaussian pulses; bandwidth enhancement; chirp reduction; gain-switched commercial semiconductor laser; gain-switched pulses; high frequency pulse generation; laser bandwidth; semiconductor diode; strong external injection; time-bandwidth product; transform limit; Bandwidth; Frequency; Laser mode locking; Optical attenuators; Optical modulation; Optical pulse generation; Optical pulses; Pulse generation; Pulse modulation; Semiconductor lasers;
Conference_Titel :
High Frequency Postgraduate Student Colloquium, 2000
Conference_Location :
Dublin
Print_ISBN :
0-7803-6590-9
DOI :
10.1109/HFPSC.2000.874094
