GaAs/InGaP HBT devices and circuits

Author

Davies, I. ; Davies, R.A. ; Marsh, S.P. ; Peniket, N.A. ; Wadsworth, S.D. ; Wallis, R.H.

Author_Institution

GEC-Marconi Mater. Technol. Ltd., Towcester, UK

fYear

1997

fDate

24-25 Nov 1997

Firstpage

33

Lastpage

38

Abstract

An enhanced GaAs/InGaP HBT process has been developed at GMMT for the implementation of high performance digital and microwave circuit functions. Improvements have been made in device characteristics, with small area devices exhibiting current gain (β) values of over 150, following a better understanding of the contributions of various parts of the geometry to the base current. This paper will give a description of the enhanced process, and of the benefits in performance, yield and uniformity which have been achieved. This will be followed by a discussion of the issues of device modelling and reliability, and conclude with an examination of some circuit designs which have been constructed using the design models

Keywords

III-V semiconductors; bipolar MMIC; bipolar digital integrated circuits; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; integrated circuit yield; semiconductor device models; semiconductor device reliability; GaAs-InGaP; GaAs/InGaP HBT process; MMIC technology; base current; circuit designs; current gain; device modelling; device reliability; digital circuit functions; microwave circuit functions; small area devices; uniformity; yield; Current density; Degradation; Gallium arsenide; Geometry; Heterojunction bipolar transistors; Implants; Isolation technology; Materials science and technology; Microwave circuits; Microwave devices;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on

Conference_Location

London

Print_ISBN

0-7803-4135-X

Type

conf

DOI

10.1109/EDMO.1997.668490

Filename

668490