DocumentCode
2493102
Title
Ultra Thin-Film MSM Photodetector with Low Parasitic Capacitance
Author
Cha, Cheolung ; Lee, Yunsik ; Jokerst, Nan M. ; Brooke, Martin A. ; Seo, Sang-Woo
Author_Institution
Korea Electron. Technol. Inst., Kyungki
fYear
2006
fDate
22-25 Oct. 2006
Firstpage
174
Lastpage
176
Abstract
Parasitic capacitance analysis of an ultra thin-film metal-semiconductor-metal (MSM) photodetector (PD) having the lowest capacitance per unit surface area is reported in this paper. Through cladding layers removing process using etching, 50-60 % decrease in the parasitic capacitance of the MSM photodetectors, compared to the conventional inverted thin-film MSM photodetectors, was obtained. The parasitic capacitance of the MSM photodetectors depending on etching time was optimized and analyzed using RF modeling techniques in this report.
Keywords
etching; metal-semiconductor-metal structures; photodetectors; MSM photodetector; RF modeling; cladding layers removal process; etching; low parasitic capacitance; metal-semiconductor-metal photodetector; ultra thin-film; Detectors; Etching; Indium compounds; Indium gallium arsenide; Parasitic capacitance; Photodetectors; Radio frequency; Substrates; Thin film sensors; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2006. 5th IEEE Conference on
Conference_Location
Daegu
ISSN
1930-0395
Print_ISBN
1-4244-0375-8
Electronic_ISBN
1930-0395
Type
conf
DOI
10.1109/ICSENS.2007.355747
Filename
4178585
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