DocumentCode
2493130
Title
Low noise hybrid-monolithic amplifier with PHEMT transistors
Author
Krutov, A.V. ; Rebrov, A.S.
Author_Institution
FSUC RPC, Fryazino, Russia
fYear
2004
fDate
13-17 Sept. 2004
Firstpage
96
Lastpage
97
Abstract
The paper presents the results of the development and manufacture of an X-band super miniature low noise amplifier. The amplifier design and manufacturing technology are considered. Measured microwave parameters are shown.
Keywords
HEMT circuits; linear network synthesis; microwave amplifiers; microwave circuits; PHEMT transistors; X-band amplifier; amplifier design; hybrid-monolithic amplifier; low noise amplifier; manufacturing technology; microwave parameters; super miniature amplifier; Automatic frequency control; Gallium arsenide; Helium; IEEE catalog; Low-noise amplifiers; Microwave measurements; Microwave transistors; PHEMTs; Pulp manufacturing; Telecommunications;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology, 2004. CriMico 2004. 2004 14th International Crimean Conference on
Print_ISBN
966-7968-69-3
Type
conf
DOI
10.1109/CRMICO.2004.183116
Filename
1390098
Link To Document