Title :
A monolithic 2.4 GHz, 0.13 μm CMOS power amplifier with 28 dBm output power and 48% PAE at 1.2 V supply
Author :
Vasylyev, Andriy ; Weger, P. ; Bakalski, W. ; Thuringer, R. ; Simburger, W.
Author_Institution :
Brandenburg Univ. of Technol., Cottbus, Germany
Abstract :
A two stage differential (push-pull) Class AB power amplifier for 2.4 GHz has been realized in a 0.13 μm standard CMOS technology. A microstrip line matching network was used for the impedance transformation. A maximum output power of 28 dBm was achieved at 1.2 V supply voltage and 48% power added efficiency. The small signal gain is 26 dB.
Keywords :
CMOS analogue integrated circuits; UHF circuits; UHF power amplifiers; differential amplifiers; electric impedance; impedance matching; integrated circuit design; microstrip circuits; monolithic integrated circuits; 0.13 micron; 1.2 V; 2.4 GHz; 26 dB; CMOS amplifier; Class AB amplifier; circuit design; differential amplifier; impedance transformation; microstrip line matching network; monolithic power amplifier; power added efficiency; push-pull amplifier; CMOS technology; Capacitors; Driver circuits; Impedance matching; Microstrip; Power amplifiers; Power generation; Power supplies; Solid modeling; Transceivers;
Conference_Titel :
Microwave and Telecommunication Technology, 2004. CriMico 2004. 2004 14th International Crimean Conference on
Print_ISBN :
966-7968-69-3
DOI :
10.1109/CRMICO.2004.183117
