DocumentCode
2493348
Title
Semiconductor microwave oscillators controlled by the bias voltage
Author
Usanov, D. ; Skripal, A. ; Abramov, A. ; Pozdnyakov, V.
Author_Institution
Saratov State Univ., Russia
fYear
2004
fDate
13-17 Sept. 2004
Firstpage
117
Lastpage
118
Abstract
A simple method for control of the output power of semiconductor microwave oscillators by changing the bias voltage of an active element when using a scheme with a synchronized oscillator is investigated. It is proved theoretically and realized experimentally that the output power of semiconductor microwave oscillators can be controlled by changing the bias voltage of an active element. A change of up to 40 dB of the oscillator output power has been achieved at a constant output frequency when the bias changes by 2.7%.
Keywords
Gunn oscillators; microwave circuits; microwave oscillators; Gunn oscillator; active element; bias voltage; output power control; semiconductor microwave oscillators; synchronized oscillator; Gunn devices; Microwave oscillators; Optical control; Power generation; Semiconductor diodes; Voltage control; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology, 2004. CriMico 2004. 2004 14th International Crimean Conference on
Print_ISBN
966-7968-69-3
Type
conf
DOI
10.1109/CRMICO.2004.183126
Filename
1390108
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