• DocumentCode
    2493383
  • Title

    A Wideband LNA for Wireless Multistandard Receiver in l30nm CMOS SOI Process

  • Author

    Martineau, B. ; Tinella, C. ; Gianesello, F. ; Cathelin, A. ; Belot, D. ; Danneville, F. ; Kaiser, A.

  • Author_Institution
    STMicroelectronics
  • fYear
    0
  • fDate
    0-0 0
  • Firstpage
    449
  • Lastpage
    452
  • Abstract
    This paper presents a wide-band multi-standard CMOS SOI LNA architecture for wireless applications, such as GSM, DCS, WCDMA, Bluetooth and 802.11b,g WLAN. The target frequency band extends from 900 MHz to 2.5 GHz. The LNA, integrated in a 130nm CMOS SOI process, exhibits a simulated power gain of 17 dB with an input return loss of 10 dB over the band, a minimum noise figure of 2.2dB at 900 MHz, 1.9dB at 1800 MHz, 2dB at 2.1 GHz, 2.3dB at 2.5 GHz respectively, an IIP3 in band of -5dBm. The core circuit consumes 13 mA from a 1.2V supply voltage
  • Keywords
    CMOS integrated circuits; low noise amplifiers; radio receivers; silicon-on-insulator; wideband amplifiers; 1.2 V; 1.9 dB; 10 dB; 13 mA; 130 nm; 17 dB; 2 dB; 2.2 dB; 2.3 dB; 900 to 2500 MHz; CMOS; SOI; wideband LNA; wireless multistandard receiver; Bluetooth; CMOS process; Circuit simulation; Distributed control; Frequency; GSM; Gain; Multiaccess communication; Wideband; Wireless LAN;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Research in Microelectronics and Electronics 2006, Ph. D.
  • Conference_Location
    Otranto
  • Print_ISBN
    1-4244-0157-7
  • Type

    conf

  • DOI
    10.1109/RME.2006.1689990
  • Filename
    1689990