• DocumentCode
    2493387
  • Title

    RF overdrive experiments on 0.5 μm power pHEMTs

  • Author

    Kaper, V. ; Ersland, P.

  • Author_Institution
    M/A-COM, Lowell, MA, USA
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    61
  • Lastpage
    68
  • Abstract
    The effect of large signal drive on long-term device reliability was investigated on M/A-COM 0.5 μm power pHEMTs with 600 μm gate periphery by stressing devices on-wafer at normal gate and accelerated drain bias conditions with various RF input drives in the high compression regime (RF overdrive condition). Complete DC characterization and input/output power measurements were performed every 5 minutes during the stress
  • Keywords
    power HEMT; semiconductor device reliability; 0.5 micron; RF overdrive; power pHEMT; reliability; Circuit testing; Degradation; Gallium arsenide; PHEMTs; Performance evaluation; Power measurement; RF signals; Radio frequency; Stress; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    GaAs Reliability Workshop, 1999. Proceedings
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    0-7908-0100-0
  • Type

    conf

  • DOI
    10.1109/GAASRW.1999.874136
  • Filename
    874136
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2493387