Title :
RF overdrive experiments on 0.5 μm power pHEMTs
Author :
Kaper, V. ; Ersland, P.
Author_Institution :
M/A-COM, Lowell, MA, USA
Abstract :
The effect of large signal drive on long-term device reliability was investigated on M/A-COM 0.5 μm power pHEMTs with 600 μm gate periphery by stressing devices on-wafer at normal gate and accelerated drain bias conditions with various RF input drives in the high compression regime (RF overdrive condition). Complete DC characterization and input/output power measurements were performed every 5 minutes during the stress
Keywords :
power HEMT; semiconductor device reliability; 0.5 micron; RF overdrive; power pHEMT; reliability; Circuit testing; Degradation; Gallium arsenide; PHEMTs; Performance evaluation; Power measurement; RF signals; Radio frequency; Stress; Transconductance;
Conference_Titel :
GaAs Reliability Workshop, 1999. Proceedings
Conference_Location :
Monterey, CA
Print_ISBN :
0-7908-0100-0
DOI :
10.1109/GAASRW.1999.874136
