Lateral Current Spreading Effect on the Efficiency Droop in GaN Based Light-Emitting Diodes

Author

Shanjin Huang ; Bingfeng Fan ; Zimin Chen ; Zhiyuan Zheng ; Hongtai Luo ; Zhisheng Wu ; Gang Wang ; Hao Jiang

Author_Institution

State Key Lab. of Optoelectron. Mater. & Technol., Sun Yat-sen Univ., Guangzhou, China

Volume

9

Issue

4

fYear

2013

fDate

Apr-13

Firstpage

266

Lastpage

271

Abstract

The lateral current spreading (CS) effect on the efficiency droop in GaN-based LEDs has been studied in terms of the CS distance (L_CS) using a designed pattern with the 2-D current spreading profile. The correlations of CS effect with the electrical, luminescent and electric-thermal properties of the LEDs have been discussed. LEDs with the L_CS longer than the theoretically calculated effective CS length (L_eff) suffer from more serious efficiency droop and the degradation of luminescent properties. However, the influence of CS effect on the ideality factors of LEDs is not obvious. Higher chip temperature caused by poor CS was observed and may further enlarge the efficiency droop.

Keywords

III-V semiconductors; gallium compounds; light emitting diodes; thermal properties; wide band gap semiconductors; 2D current spreading profile; CS distance; CS length; GaN; efficiency droop; electric-thermal properties; lateral current spreading effect; light-emitting diode; luminescent properties; Current density; Gallium nitride; Light emitting diodes; Proximity effects; Semiconductor device measurement; Solid state lighting; Temperature measurement; Efficiency droop; ideality factor; lateral current spreading; light-emitting diodes (LEDs);

fLanguage

English

Journal_Title

Display Technology, Journal of

Publisher

ieee

ISSN

1551-319X

Type

jour

DOI

10.1109/JDT.2012.2225092

Filename

6418054