DocumentCode :
2493437
Title :
Generation of coherent photocurrent oscillations in GaAs structures with noninjecting contacts by illumination
Author :
Perepelitsyn, Yu.N.
Author_Institution :
Inst. of Radio Eng. & Electron., Acad. of Sci., Saratov
fYear :
2000
fDate :
2000
Firstpage :
143
Lastpage :
146
Abstract :
Investigation results are presented for the inherent features of strong field Gunn domain generation using illumination and their characteristics are described for bulk Gunn diodes with noninjecting contacts. The optical control of the parameters of light flow is shown to be possible on the base of generated domains
Keywords :
Gunn diodes; III-V semiconductors; gallium arsenide; optical control; photoconducting devices; photoconducting materials; GaAs; GaAs structures; bulk Gunn diodes; coherent photocurrent oscillations; generated domain base; illumination; light flow parameters; noninjecting contacts; strong field Gunn domain generation; Character generation; Gallium arsenide; Gunn devices; Lighting; Optical control; Optical pulse generation; Optical pulses; Photoconductivity; Pulse circuits; Schottky diodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Transparent Optical Networks, 2000 2nd International Conference on
Conference_Location :
Gdansk
Print_ISBN :
0-7803-6337-X
Type :
conf
DOI :
10.1109/ICTON.2000.874139
Filename :
874139
Link To Document :
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