• DocumentCode
    2493660
  • Title

    Optically controlling photonic band gap logic elements

  • Author

    Nefedov, Igor ; Morozov, Yurii ; Gusyatnikov, Viktor ; Zheltikov, Aleksei

  • Author_Institution
    Inst. of Radio Eng. & Electron., Acad. of Sci., Saratov, Russia
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    195
  • Lastpage
    198
  • Abstract
    The change in the refractive index of GaAs due to the light-induced generation of nonequilibrium charge carriers is shown to substantially change the transmission of a one-dimensional GaAs/GaAlAs photonic band-gap structure, allowing low-threshold photonic-crystal optical logic gates to be created. Elementary logic operations of the Boolean algebra performed with nonlinear PBG structures, including the biconditional implication, module-two addition, Peirce´s arrow, and disjunction, are demonstrated. We show how different logic operations can be performed with the same GaAs/GaAlAs PBG structure at different power densities of logic pulses
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; optical logic; photonic band gap; refractive index; Boolean algebra; GaAs-GaAlAs; GaAs/GaAlAs one-dimensional photonic band gap structure; nonequilibrium charge carrier generation; nonlinear structure; optical logic gate; refractive index; Charge carriers; Gallium arsenide; Logic functions; Logic gates; Nonlinear optics; Optical control; Optical refraction; Optical variables control; Photonic band gap; Refractive index;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Transparent Optical Networks, 2000 2nd International Conference on
  • Conference_Location
    Gdansk
  • Print_ISBN
    0-7803-6337-X
  • Type

    conf

  • DOI
    10.1109/ICTON.2000.874152
  • Filename
    874152