Investigation on GaAs power MESFETs submitted to RF life-test by LF noise and drain current transient analysis

Author

Malbert, N. Saysset ; Lambert, B. ; Maneux, C. ; Labat, N. ; Touboul, A. ; Danto, Y. ; Huguet, P. ; Auxemery, P. ; Garat, F.

Author_Institution

IXL, Bordeaux I Univ., Talence, France

fYear

1999

fDate

1999

Firstpage

77

Lastpage

83

Abstract

The purpose of this work is to evaluate the impact of RF life-test under gain compression on ion-implanted power MESFETs by LF gate noise and drain noise analysis combined with drain current transient spectroscopy (DCTS). While the devices under test belong to a mature technology, such an evaluation aims at reaching space program requirements in terms of reliability assessment

Keywords

III-V semiconductors; deep level transient spectroscopy; gallium arsenide; life testing; power MESFET; semiconductor device noise; semiconductor device reliability; semiconductor device testing; GaAs; GaAs power MESFET; LF noise; RF life testing; drain current transient spectroscopy; gain compression; ion implantation; reliability; Aging; Circuit testing; Current measurement; Gallium arsenide; Low-frequency noise; MESFETs; Pulse measurements; Radio frequency; Semiconductor device noise; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs Reliability Workshop, 1999. Proceedings

Conference_Location

Monterey, CA

Print_ISBN

0-7908-0100-0

Type

conf

DOI

10.1109/GAASRW.1999.874163

Filename

874163