Title :
Reliability testing of 0.1 μm GaAs pseudomorphic HEMT MMIC amplifiers
Author :
Leung, D.L. ; Chou, Y.C. ; Wu, C.S. ; Kono, R. ; Scarpulla, J. ; Lai, R. ; Hoppe, M. ; Streit, D.C.
Author_Institution :
Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Abstract :
Reliability testing was completed on 0.1 μm gate length GaAs pseudomorphic HEMT MMICs. The circuit used for reliability testing is the ALH225C, a 2-stage Q band balanced amplifier. This MMIC was fabricated on both power and low noise substrate profiles. Both versions of the circuit were tested. The lifetests were conducted with accelerated DC bias and temperature conditions in order to attain failure in a reasonable length of time. Approximately 152 MMICs were used for step stress and lifetesting at 255, 270 and 285°C ambient temperature. Despite the aggressive bias used in this lifetest, the estimated lifetimes at 125°C for this process are high. The parameters extracted from this study for the high power MBE profile are MTF (125°C) of 6×109 hours, with activation energy of 1.7 eV, and for the low noise MBE profile are MTF (125°C) of 7×107 hours, with activation energy of 1.3 eV
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; differential amplifiers; field effect MMIC; gallium arsenide; integrated circuit reliability; integrated circuit testing; life testing; 0.1 micron; 125 C; 255 to 285 C; ALH225C; GaAs; GaAs pseudomorphic HEMT MMIC amplifier; Q-band balanced amplifier; activation energy; life testing; mean-time-to-failure; parameter extraction; reliability testing; step-stress testing; Acceleration; Circuit noise; Circuit testing; Gallium arsenide; Life estimation; Lifetime estimation; MMICs; PHEMTs; Stress; Temperature;
Conference_Titel :
GaAs Reliability Workshop, 1999. Proceedings
Conference_Location :
Monterey, CA
Print_ISBN :
0-7908-0100-0
DOI :
10.1109/GAASRW.1999.874166
