DocumentCode
2493844
Title
An experimental extraction of low noise field effect transistor´s linear equivalent circuit and noise model
Author
Krutov, A.V. ; Rebrov, A.S.
Author_Institution
FSUC RPC "Istok", Fryazino, Russia
fYear
2004
fDate
13-17 Sept. 2004
Firstpage
164
Lastpage
165
Abstract
An experimental extraction of a low noise field effect transistor\´s linear equivalent circuit and noise model is presented. The linear equivalent circuits and noise models are extracted for two types of FET (3P374A-5 manufactured by joint-stock company "Planet-GaAs", "Sozvezdiye-P" manufactured by FSUC RPC "Istok") and two types PHEMT manufactured by FSUC RPC "Istok" (molecular beam epitaxy structure and metalorganic vapor phase epitaxy structure).
Keywords
equivalent circuits; field effect transistors; power HEMT; semiconductor device models; semiconductor device noise; PHEMT; linear equivalent circuit; low noise FET; low noise field effect transistor; metalorganic vapor phase epitaxy structure; molecular beam epitaxy structure; noise model; power HEMT; Circuit noise; Equivalent circuits; Frequency; Gallium arsenide; IEEE catalog; Manufacturing; Microwave FETs; Organizing; PHEMTs; Telecommunications;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology, 2004. CriMico 2004. 2004 14th International Crimean Conference on
Print_ISBN
966-7968-69-3
Type
conf
DOI
10.1109/CRMICO.2004.183146
Filename
1390128
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