Title :
GaN Heterodimensional Schottky Diode for THz Detection
Author :
Veksler, D. ; Aniel, F. ; Rumyantsev, S. ; Shur, M.S. ; Pala, N. ; Hu, X. ; Fareed, R.S.Q. ; Gaska, R.
Author_Institution :
Rensselaer Polytech. Inst., Troy
Abstract :
The performance of conventional Schottky diodes used for detecting THz radiation is limited by the RC product. Heterodimensional diodes have a smaller capacitance and series resistance. In this paper, we present the first experimental demonstration of THz detection by AlGaN/GaN heterodimensional Schottky diodes (HDSD) that exhibited reasonable performance up to at least 2.24 THz.
Keywords :
III-V semiconductors; Schottky diodes; aluminium compounds; gallium compounds; semiconductor heterojunctions; submillimetre wave detectors; GaN; THz detection; frequency 2.24 THz; heterodimensional Schottky diode; Aluminum gallium nitride; Capacitance; Cutoff frequency; Gallium nitride; Immune system; Indium gallium arsenide; Radiation detectors; Schottky barriers; Schottky diodes; USA Councils;
Conference_Titel :
Sensors, 2006. 5th IEEE Conference on
Conference_Location :
Daegu
Print_ISBN :
1-4244-0375-8
Electronic_ISBN :
1930-0395
DOI :
10.1109/ICSENS.2007.355471
