DocumentCode
2493879
Title
A 0.1–8.5 GHz wideband CMOS LNA using forward body bias technology for SDR applications
Author
Zhang Hao ; Deng Qing ; Liu Haitao ; Xie Shushan ; Zhi Qunli ; Wang Zhigong
Author_Institution
Nanjing Res. Inst. of Electron. Technol., Nanjing, China
Volume
3
fYear
2012
fDate
5-8 May 2012
Firstpage
1
Lastpage
4
Abstract
A low power broad band CMOS LNA for software-defined radio (SDR) applications is presented. The LNA is based on the common source cascade amplifier with active feedback. To realize a high gain bandwidth, the inductor shunt peaking technology was used. In order to acquire a good S11 performance over a high frequency band range, a parallel RC network feedback was used too. By using the forward body bias technology, the cascade LNA can operate under 1V supply voltage to reduce the power consumption. The LNA was fabricated using a 90nm RF CMOS technology. The measurement results show that the LNA achieves a bandwidth of 8.4 GHz from 0.1-8.5GHz with a 16.3 dB voltage gain, noise figures from 2.7 dB to 3.9 dB across the whole band, and an input third-order intermodulation product (IIP3) of -4 dBm, the power consumption is about 10 mW without the buffer under the 1V supply voltage.
Keywords
CMOS analogue integrated circuits; UHF antennas; UHF integrated circuits; feedback amplifiers; low noise amplifiers; software radio; wideband amplifiers; IIP3; RF CMOS technology; SDR; active feedback; bandwidth 8.4 GHz; common source cascade amplifier; forward body bias technology; frequency 0.1 GHz to 8.5 GHz; gain 16.3 dB; inductor shunt peaking technology; input third-order intermodulation product; low power broadband CMOS LNA; noise figure 2.7 dB to 3.9 dB; parallel RC network feedback; power consumption; size 90 nm; software-defined radio; voltage 1 V; wideband CMOS LNA; Bandwidth; CMOS integrated circuits; Gain; Noise measurement; Power demand; Radio frequency; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on
Conference_Location
Shenzhen
Print_ISBN
978-1-4673-2184-6
Type
conf
DOI
10.1109/ICMMT.2012.6230213
Filename
6230213
Link To Document