Title :
Reliability performance of components and ICs from a production 1 μm GaAs HBT process
Author :
Yamada, F.M. ; Oki, A.K. ; Streit, D.C. ; Hikin, B.L. ; Kanesh, E.N. ; Lammert, M.D. ; Tran, L.T. ; Block, T.R. ; Grossman, P.C. ; Scarpulla, J.R. ; Gutierrez-Aitken, A.L.
Author_Institution :
Electron. Technol. Div., TRW Inc., Redondo Beach, CA, USA
Abstract :
We report on the reliability performance of our advanced production 1 μm GaAs/AlGaAs Heterojunction Bipolar Transistor (HBT) technology featuring HBTs with thinner Be-doped base layer, smaller emitter dimensions and higher current density (Jc) operation than our current production process. Reliability characteristics of discrete Npn HBTs, Schottky diodes, NiCr thin-film resistors (TFRs), trimmable CerMet TFRs and a HBT integrated circuit (IC) are presented. The purpose of this work was to qualify a new process technology for space/defense and commercial applications. The intent of this paper is to report the robustness of Be-doped HBTs at higher Jc operation and the high level of reliability achieved in an IC fabricated using this new process. Additionally, this paper provides a reference on reliability of passive IC components with compositional features similar to that commonly implemented in industry
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; integrated circuit reliability; semiconductor device reliability; 1 micron; GaAs-AlGaAs; GaAs/AlGaAs HBT technology; ICs; components; reliability; Current density; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit reliability; Integrated circuit technology; Production; Resistors; Schottky diodes; Space technology; Thin film circuits;
Conference_Titel :
GaAs Reliability Workshop, 1999. Proceedings
Conference_Location :
Monterey, CA
Print_ISBN :
0-7908-0100-0
DOI :
10.1109/GAASRW.1999.874171
