Title :
Record Low-Power Organic RRAM With Sub-20-nA Reset Current
Author :
Wenliang Bai ; Ru Huang ; Yimao Cai ; Yu Tang ; Xing Zhang ; Yangyuan Wang
Author_Institution :
Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing, China
Abstract :
In this letter, organic resistive random access memory (RRAM) devices based on double-layer polychloro-para-xylylene (parylene-C) are fabricated, which show stable bipolar resistive switching behavior, excellent data retention, and high scalability. Moreover, extremely low reset current of sub-20 nA and set current of 0.15 μA are obtained with adequate switching margin for the first time in the field of organic RRAM, almost 105 times lower than that of the single-layer parylene-C cells, exhibiting great potentials for future low-power applications. Possible mechanism for the ultralow operating current of double-layer device is discussed.
Keywords :
random-access storage; bipolar resistive switching behavior; current 0.15 muA; current 20 nA; double-layer polychloro-paraxylylene; excellent data retention; high scalability; organic resistive random access memory device; record low-power organic RRAM; reset current; single-layer parylene-C cells; Current measurement; Electrodes; Performance evaluation; Polymers; Resistance; Switches; Temperature measurement; Double layer; low power; organic resistive random access memory (RRAM); parylene-C; single layer;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2231047
