DocumentCode :
2494195
Title :
A Wide Dynamic Range CMOS Image Sensor with Gated Charge Storage and a Multiple Sampling Technique
Author :
Shafie, Suhaidi ; Kawahito, S.
Author_Institution :
Shizuoka Univ., Hamamatsu
fYear :
2006
fDate :
22-25 Oct. 2006
Firstpage :
404
Lastpage :
407
Abstract :
A wide dynamic range CMOS image sensor which has a photodiode and a gated storage diode in each pixel is proposed. The storage diode outputs with short accumulation time are read out for multiple times, and the photodiode output and the multiple-sampled storage diode outputs are synthesized in an external system. A separation gate is used to control the charge flow to the storage diode. The proposed technique allows very wide dynamic range imaging with less motion artifact. The operation of the proposed pixel device structure is simulated and an experimental CMOS image sensor is implemented in 0.18 mum CMOS image sensor technology.
Keywords :
CMOS image sensors; charge storage diodes; photodiodes; CMOS image sensor; dynamic range imaging; external system; gated charge storage; multiple sampling technique; photodiode; size 0.18 mum; wide dynamic range; CMOS image sensors; CMOS technology; Capacitors; Diodes; Dynamic range; Image sampling; Image sensors; Image storage; Photodiodes; Pixel;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sensors, 2006. 5th IEEE Conference on
Conference_Location :
Daegu
ISSN :
1930-0395
Print_ISBN :
1-4244-0375-8
Electronic_ISBN :
1930-0395
Type :
conf
DOI :
10.1109/ICSENS.2007.355491
Filename :
4178643
Link To Document :
بازگشت