Title :
Asymmetric double grating gate detector fabricated on industrial pseudomorphic AlGaAs/InGaAs/AlGaAs heterostructure
Author :
Gaspare, A. Di ; Casini, R. ; Diakonova, N. ; Drexler, C. ; Giliberti, V. ; Ortolani, M. ; Coquillat, D. ; Knap, W. ; Ganichev, S.D.
Author_Institution :
Inst. for Photonics & Nanotechnol., Sapienza Univ., Rome, Italy
Abstract :
Rectification at room temperature by asymmetric double-grating-gate GaAs-based field effect transistors has been observed up to 3.89 THz at zero drain bias, and attributed to the peculiar unequal spacing among the two gratings.
Keywords :
III-V semiconductors; aluminium compounds; diffraction gratings; gallium arsenide; high electron mobility transistors; indium compounds; rectification; terahertz wave detectors; AlGaAs-InGaAs-AlGaAs; asymmetric double grating gate detector; asymmetric double-grating-gate field effect transistors; frequency 3.89 THz; industrial pseudomorphic heterostructure; peculiar unequal spacing; room temperature rectification; temperature 293 K to 298 K; zero drain bias; Fingers; Gratings; HEMTs; Logic gates; MODFETs; Voltage measurement;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on
Conference_Location :
Wollongong, NSW
Print_ISBN :
978-1-4673-1598-2
Electronic_ISBN :
2162-2027
DOI :
10.1109/IRMMW-THz.2012.6379488
