Title :
Terahertz photoluminescence from GaN(Si) epitaxial layers under continuous-wave interband excitation
Author :
Andrianov, V. ; Zakhar´in, A.O. ; Bobylev, A.V. ; Feng, Z.C.
Author_Institution :
A.F. Ioffe Phys. Tech. Inst., St. Petersburg, Russia
Abstract :
We report on terahertz emission from n-GaN films under steady state interband photoexcitation at low temperatures. The properties of the terahertz photoluminescence allow us to conclude that the emission occur under capture of nonequilibrium electrons to ionized donor centers.
Keywords :
III-V semiconductors; gallium compounds; photoexcitation; photoluminescence; semiconductor epitaxial layers; silicon; terahertz wave spectra; wide band gap semiconductors; GaN:Si; continuous-wave interband excitation; epitaxial layers; ionized donor centers; n-GaN films; nonequilibrium electrons; steady state interband photoexcitation; terahertz emission; terahertz photoluminescence properties; Electric breakdown; Gallium nitride; Impurities; Optical scattering; Photoluminescence; Silicon; Stimulated emission;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on
Conference_Location :
Wollongong, NSW
Print_ISBN :
978-1-4673-1598-2
Electronic_ISBN :
2162-2027
DOI :
10.1109/IRMMW-THz.2012.6379503
