Title :
Design Guides for a Correct DC Operation in RTD-based Threshold Gates
Author :
Quintana, Jose M. ; Avedillo, María J. ; Nunez, Juan
Author_Institution :
Inst. de Microelectronica de Sevilla, Centro Nacional de Microelectronica, Sevilla
Abstract :
A correct DC operation is essential before analyzing other aspects of the circuit behavior. This paper analyzes how the presence of the HFET transistor modifies the DC operation of follower circuits based on MOBILE, and can prevent its correct operation. On the basis of this analysis, guidelines for the design of threshold gates which are implemented as a generalization of the follower circuit topology are derived
Keywords :
high electron mobility transistors; logic design; logic gates; network topology; resonant tunnelling diodes; DC operation; HFET transistor; MOBILE; RTD-based threshold gates; circuit behavior; circuit topology; monostable-bistable logic element; resonant tunnelling diodes; Bismuth; Circuit faults; Digital systems; HEMTs; Intrusion detection; Low voltage; MODFETs; Microwave integrated circuits; Tellurium;
Conference_Titel :
Digital System Design: Architectures, Methods and Tools, 2006. DSD 2006. 9th EUROMICRO Conference on
Conference_Location :
Dubrovnik
Print_ISBN :
0-7695-2609-8
DOI :
10.1109/DSD.2006.42
