DocumentCode
2494908
Title
Design Guides for a Correct DC Operation in RTD-based Threshold Gates
Author
Quintana, Jose M. ; Avedillo, María J. ; Nunez, Juan
Author_Institution
Inst. de Microelectronica de Sevilla, Centro Nacional de Microelectronica, Sevilla
fYear
0
fDate
0-0 0
Firstpage
530
Lastpage
536
Abstract
A correct DC operation is essential before analyzing other aspects of the circuit behavior. This paper analyzes how the presence of the HFET transistor modifies the DC operation of follower circuits based on MOBILE, and can prevent its correct operation. On the basis of this analysis, guidelines for the design of threshold gates which are implemented as a generalization of the follower circuit topology are derived
Keywords
high electron mobility transistors; logic design; logic gates; network topology; resonant tunnelling diodes; DC operation; HFET transistor; MOBILE; RTD-based threshold gates; circuit behavior; circuit topology; monostable-bistable logic element; resonant tunnelling diodes; Bismuth; Circuit faults; Digital systems; HEMTs; Intrusion detection; Low voltage; MODFETs; Microwave integrated circuits; Tellurium;
fLanguage
English
Publisher
ieee
Conference_Titel
Digital System Design: Architectures, Methods and Tools, 2006. DSD 2006. 9th EUROMICRO Conference on
Conference_Location
Dubrovnik
Print_ISBN
0-7695-2609-8
Type
conf
DOI
10.1109/DSD.2006.42
Filename
1690083
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