Design of a 220GHz 4X subharmonical mixer using terahertz GaAs Schottky diodes BITD1530A

Author

Ling-Chen ; Jingchao-Mou ; Mingming-Xu ; Weihua-Yu ; Xin-Lv

Author_Institution

Lab. of Microwave Commun. & Electron. Syst., Beijing Inst. of Technol., Beijing, China

Volume

4

fYear

2012

fDate

5-8 May 2012

Firstpage

1

Lastpage

4

Abstract

In this paper, we present the design and optimization of a 220GHz 4X subharmonical mixer based on an antiparallel pair of planar GaAs Schottky diodes BITDA1530 from Beijing Institute of Technology, which is flip-chipped onto the 100 μm thick quartz microstrip circuit. The finline and E-plane probe waveguide to microstrip line transitions are adopted for coupling the RF and LO signal respectively. The optimized 4X subharmonical mixer exhibits that the double side band (DSB) conversion loss is below 25 dB over the range of 217-223 GHz, with the minimum of 21.5 dB under the LO level of 5 mW.

Keywords

III-V semiconductors; Schottky diode mixers; flip-chip devices; gallium arsenide; microstrip transitions; millimetre wave diodes; millimetre wave mixers; BITD1530A terahertz planar Schottky diodes; DSB conversion loss; E-plane probe waveguide; GaAs; LO signal; RF signal; double side band conversion loss; finline; flip-chip; frequency 217 GHz to 223 GHz; microstrip line transitions; optimized 4X subharmonical mixer; power 5 mW; quartz microstrip circuit; size 100 mum; Cutoff frequency; Gallium arsenide; Microstrip; Mixers; Radio frequency; Schottky diodes; Waveguide transitions;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on

Conference_Location

Shenzhen

Print_ISBN

978-1-4673-2184-6

Type

conf

DOI

10.1109/ICMMT.2012.6230290

Filename

6230290